Integrated circuit with bulk and SOI devices connected with an epitaxial region

ABSTRACT

An integrated circuit having devices fabricated in both SOI regions and bulk regions, wherein the regions are connected by a trench filled with epitaxially deposited material. The filled trench provides a continuous semiconductor surface joining the SOI and bulk regions. The SOI and bulk regions may have the same or different crystal orientations. The present integrated circuit is made by forming a substrate with SOI and bulk regions separated by an embedded sidewall spacer (made of dielectric). The sidewall spacer is etched, forming a trench that is subsequently filled with epitaxial material. After planarizing, the substrate has SOI and bulk regions with a continuous semiconductor surface. A butted P-N junction and silicide layer can provide electrical connection between the SOI and bulk regions.

FIELD OF THE INVENTION

The present invention relates generally to integrated circuits and CMOSor FET devices. More specifically, the present invention relates to aCMOS chip with devices fabricated in bulk material, and devicesfabricated in SOI material. The devices are connected with a buttedsilicide junction.

BACKGROUND OF THE INVENTION

Semiconductor devices are typically manufactured using one of twodifferent types of semiconductor substrate: bulk substrate andsilicon-on-insulator or semiconductor-on-insulator (SOI) substrate. Bulkfabricated devices employ a monolithic semiconductor substrate with noburied layers. SOI substrates have a buried layer of an insulatingmaterial, typically silicon dioxide (SiO2), under the electronicdevices.

It is well known in the art that SOI and bulk fabricated devices havedifferent benefits and different applications. For example, SOI devicescan have the advantages of reduced parasitic capacitance and lower powerconsumption compared to bulk fabricated devices. In comparison, bulkfabricated devices can provide other advantages such as control of bodyvoltage, which can be used to adjust the threshold voltage of an FETdevice. Also, bulk fabricated devices can typically have a lowermanufacturing cost and higher power-handling capability. Therefore, thechoice between SOI and bulk fabrication typically depends upon circuitapplication and performance requirements.

Integrated circuits using both SOI and bulk devices on a single waferwould provide the most useful solution for circuit designers because theadvantages of both kinds of devices could be exploited. However,conventional wafer processing techniques make this task very difficultto accomplish. One significant problem with integrating SOI and bulkdevices on a single substrate is making electrical connections betweenthe devices. In the past, electrical connections between SOI and bulkdevice regions have been made in the wiring layers. Unfortunately,wiring layers for connecting the SOI and bulk devices increase the sizeof the circuit. This is particularly an issue for high-density memorycircuits and microprocessors.

It would be an advance in the art to provide a simple, inexpensivemethod for fabricating both bulk and SOI devices on a single substrate.It would be particularly useful to provide small size electricalconnections between the SOI and bulk devices on a single substrate.

It is also well known that crystal orientation can greatly affect theswitching speed and current-carrying capability of field effecttransistors and other semiconductor devices. For example, P-typecomplementary metal-oxide semiconductor (CMOS) transistors can have 2-3times higher charge carrier mobility in {110}-oriented silicon comparedto {100}-oriented silicon. Similarly, N-type CMOS devices can have about2 times higher charge carrier mobility in {100}-oriented siliconcompared to {110}-oriented silicon. A wafer with only {110} or only{100} crystal orientation therefore cannot provide both P-type andN-type devices with maximum carrier mobility. For maximum carriermobility in both P-type and N-type devices, a wafer with both {110} and{100} regions is necessary.

Several methods are known for making hybrid substrates with both {110}and {100} regions. However, in prior hybrid wafer fabrication techniquesit can be difficult to provide electrical connections across the {110}and {100} regions. In the past, electrical connections have been madeusing wiring layers, which is undesirable.

Therefore, it would be an advance in the art to provide a simple andinexpensive method for making devices having different crystalorientations on a single hybrid substrate. It would be particularlyuseful to provide small size connections between the regions ofdifferent crystal orientations.

SUMMARY OF THE INVENTION

The present invention provides a semiconductor integrated circuit havinga semiconductor-on-insulator (SOI) region with a buried dielectric layerand a bulk semiconductor region adjacent to the SOI region. A trenchfilled with epitaxial semiconductor material is disposed at the boundarybetween the SOI region and bulk region. The SOI region and bulk regioncan have the same or different crystal orientations.

A buried sidewall spacer can be disposed under the filled trench.

The SOI region and bulk region can have different doping types. In thiscase, a butted P-N junction can be disposed in the SOI region or in thefilled trench. A metal silicide layer can be disposed on the butted P-Njunction. The metal silicide layer can extend over the SOI region andbulk region and provide an electrical connection between the regions.

The present invention also includes a method for forming a semiconductorintegrated circuit with an SOI region and a bulk region. In the presentmethod, separate SOI and bulk regions are formed. The SOI and bulkregions are separated by an embedded sidewall spacer. The sidewallspacer is etched to form an empty trench (the sidewall spacer may becompletely removed or partially removed). Then, semiconductor materialis epitaxially deposited in the trench.

The wafer is preferably planarized after the trench is filled withepitaxially deposited material. The SOI region and bulk region may bedoped with different dopants, so that a P-N junction is formed in thetrench or in the SOI region. A metal silicide layer may be depositedover the trench to form an electrical contact bridging the SOI regionand bulk region.

DESCRIPTION OF THE FIGURES

FIG. 1 shows a hybrid SOI/bulk CMOS integrated circuit device accordingto the present invention.

FIG. 2 a shows an embodiment of the invention in which a P-N buttedjunction overlaps a boundary between SOI and bulk device regions.

FIG. 2 b shows an embodiment of the invention in which an epitaxy filledtrench extends down to a buried oxide layer of the SOI region.

FIGS. 3 a-3 k illustrate a preferred method for making the integratedcircuit of the present invention.

FIG. 4 shows an alternative embodiment of the present invention.

FIG. 5 shows an alternative embodiment of the present invention in whichp+ and n+ doped regions do not extend deeply.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention provides an integrated circuit having devicesfabricated in both SOI regions and bulk regions. The SOI and bulkregions are separated by a trench filled with epitaxial material. Thefilled trench is a result of the present fabrication method. The filledtrench provides a continuous semiconductor surface joining the SOI andbulk regions. The SOI and bulk regions may have the same or differentcrystal orientations. The present integrated circuit is made by firstforming a substrate with SOI and bulk regions separated by an embeddedsidewall spacer (e.g. made of SiO₂). The sidewall spacer is etched,forming a trench that is subsequently filled with epitaxial material.After planarizing, the substrate has SOI and bulk regions with acontinuous semiconductor surface. FET and CMOS devices can be fabricatedin both the SOI and bulk regions. Electrical connections can be providedacross the SOI and bulk regions by doped regions and silicide layers. Nowiring layers are needed to provide electrical connections between theSOI and bulk regions.

FIG. 1 shows a CMOS integrated circuit according to the presentinvention. The circuit has a substrate 20 with an SOI region 22 and abulk region 24. The SOI region is disposed on a buried oxide layer 25(e.g., comprising SiO₂). The SOI region has a device layer 26 which mayhave a {110} crystal orientation. The bulk region 24 has a device layer28 which may have {100} crystal orientation. The bulk device layer 28 ispreferably epitaxially grown on the substrate 20. The SOI and bulkregions have field effect transistors with gate electrodes 30 and 32.The gate electrodes 30 and 32 have spacers and gate dielectric layers,as are well known in the art. A shallow trench isolation structure STIis preferably formed around a portion of the SOI region 22.

An epitaxy filled trench 34 is disposed between the SOI region 22 andbulk region 24. The epitaxy filled trench 34 comprises epitaxially grownsemiconductor material (e.g. epitaxially deposited silicon). In theembodiment described herein, at approximately the center of the epitaxyfilled trench 34, the crystal orientation undergoes a transition betweenthe {110} orientation of the SOI region and the {100} orientation of thebulk region. However, it should be understood that the SOI region 22 canhave {100} or {111} crystal orientation, and the bulk region 24 can have{110} or {111} crystal orientation. Other crystal orientations can alsobe used. The crystal orientation of the SOI region 22 and bulk region 24can be the same or different.

A buried sidewall spacer 38 is disposed under the epitaxy filled trench.The buried sidewall spacer 38 can comprise SiO₂, silicon nitride,silicon oxynitride or other dielectric materials known in the art. Theburied sidewall spacer 38 is connected to, but may not be monolithicwith the buried oxide layer 25 (i.e., the buried sidewall spacer may beformed in a separate process from the buried oxide layer 25). The buriedsidewall spacer is directly underneath the epitaxy filled trench 34. Theburied sidewall spacer 38 will typically have the same width as theepitaxy filled trench 34.

The SOI region 22 preferably has p+ doping adjacent to the gateelectrode 30 and n− doping under the electrode, as is known in the art.The device layer 26 includes the p+ and n− doped regions. The bulkregion 24 preferably has n+ doping adjacent to the gate electrode 32 andp− doping under the electrode, as is known in the art. The device layer28 includes the n+ and p− doped regions. It is noted that the p+ and p−regions should not be in contact, and that the n+ and n− regions shouldnot be in contact, as is known in the art. Such isolation is provided bymaking the n+ and p+ doped regions deep enough. Typically, the p+regions should extend down to the buried oxide layer 25. The n+ regionsshould extend down to at least the top of the buried sidewall spacer 38.

A P-N butted junction 36 is formed at the boundary of the p+ and n+doped regions. The P-N butted junction is disposed in the SOI region 22in FIG. 1.

A metal silicide layer 40 is formed on the p+ and n+ doped regions. Thesilicide layer 40 bridges the P-N junction and provides an ohmic contactbetween the p+ and n+ doped regions.

The present circuits can be made of silicon or other semiconductormaterials such as gallium arsenide, silicon carbide. The STI structure,buried oxide layer 25, gate electrodes and other dielectric structurescan be made of SiO₂, silicon nitride or other dielectric materials knownin the art.

In operation, the circuit of FIG. 1 provides the benefits of both SOIdevices and bulk devices. Both SOI devices and bulk devices areintegrated on a single substrate.

Also, the metal silicide layer 40 provides electrical connectionsbetween the SOI region 22 and bulk region 24. Hence, wiring layers arenot required to electrically connect the SOI region 22 and bulk region24, as in the prior art.

Also, since the SOI region and bulk region can have different crystalorientations, the devices in each region can be optimized for a specificcrystal orientation. For example, the CMOS device in the SOI region(i.e. with gate 30) can be a p-type FET that tends to have a highermobility in {110} orientated crystal. The CMOS device in the bulk region(i.e. with gate 32) can be an n-type FET that tends to have a highermobility in {100} oriented crystal.

The benefits of the present invention are made possible by the epitaxyfilled trench 34. The epitaxy filled trench 34 provides a smoothsemiconductor surface between the SOI region 22 and bulk region 24.Since the boundary between the SOI region 22 and bulk region 24 does nothave a dielectric-filled trench, a metal wiring layer is not requiredfor electrical connection between the two regions 22 and 24. In otherwords, the epitaxy filled trench allows the metal silicide layer 40 toprovide electrical connections between the two regions 22 and 24.

FIG. 2 a shows an alternative embodiment of the invention in which theP-N butted junction is disposed within the epitaxy filled trench 34. Inthe present invention, the P-N butted junction can be located in the SOIregion 22 or within the epitaxy filled trench 34. Since the P-N buttedjunction 36 is disposed in the SOI region 22, it provides an electricalconnection for the p+ doped region to the n+ doped region without ashort circuit to the substrate 20. If the P-N butted junction is locatedin the bulk region, a short circuit to the substrate will be created andthe device will be inoperable. Hence, the P-N butted junction cannot belocated within the bulk region 24. Also, in the device of FIG. 2 a, then+ doped region must extend down to the buried sidewall spacer 38.

FIG. 2 b shows an alternative embodiment of the invention that does nothave the buried sidewall spacer. The device of FIG. 2 b will operate inessentially the same manner as the device of FIG. 1. In this embodiment,it is necessary for the n+ doping region to extend all the way down tothe buried oxide 25 so that p+ and p− regions are isolated, and so thatn+ and n− regions are isolated.

FIGS. 3 a-3 j illustrate a preferred method for making the integratedcircuits of the present invention. These figures are described below.

FIG. 3 a: The present method begins with an SOI wafer having a buriedoxide layer. If different crystal orientations are desired for the SOIand bulk regions, then the device layer 50 must be made from a bondedwafer having a different crystal orientation than the handle substrate.In the present invention, the crystal orientation of the SOI region 22is the same as the crystal orientation of the device layer. If the SOIregion and bulk are to have the same crystal orientation, then theburied oxide layer can be made by oxygen implantation. A pad film (e.g.10 nm SiO2 with 40 nm of Si3N4) is disposed on the device layer 50. Thedevice layer 50 can have a thickness of about 15 nm to 100 nm.

FIG. 3 b: The wafer is etched to expose the handle substrate. Sidewallspacers 52 are formed on the sidewalls of the remaining portions of thedevice layer and buried oxide layer. The sidewalls spacers can compriseSiO2 or other dielectric materials. The sidewall spacers 52 can have awidth 53 of about 5 nm to 30 nm.

FIG. 3 c: Epitaxial silicon 55 is selectively grown on the handlesubstrate. The epitaxial silicon is grown until it is level with orabove the device layer 50.

FIG. 3 d: The pad film is stripped and the substrate is planarized. Thesubstrate surface has SOI and bulk regions separated by sidewall spacers52.

FIG. 3 e: Sidewall spacers 52 are recessed by a selective etch. Theselective etch can be a wet chemical etch or plasma etch, for example.Etching of the sidewall spacers forms a trench 57. The sidewall spacerscan be partially removed (as illustrated) or can be completely removed.The sidewalls spacers can be about 50% removed by the etch. Completelyremoving the sidewall spacers will ultimately create the embodimentillustrated in FIG. 2 b.

FIG. 3 f: Epitaxial growth is performed. The trench 57 is epitaxy filledwith semiconductor material. In the embodiment illustrated, the SOIregion has a {110} epitaxial layer grown, and the bulk region has a{100} layer grown. A boundary between the {110} and {100} regions islocated approximately in the center of the trench 57. Preferably, thetrench is filled without voids. The epitaxial deposition buries theunetched portion of the sidewall spacers, thereby forming the buriedsidewall spacers 38.

FIG. 3 g: The substrate is planarized. Preferably, (but optionally) allthe epitaxially deposited material is removed from the SOI and bulkregions. The substrate now has a continuous silicon surface with regionsof different crystal orientation.

FIG. 3 h: Shallow trench isolation (STI) is formed in some regions ofthe epitaxy filled trench. The shallow trench isolation STI can becreated according to many techniques known in the art. For example,reference can be made to U.S. Pat. Nos. 5,804,490 and 6,479,368 (herebyincorporated by reference) for more information on how to create ashallow trench isolation. Also, the SOI and bulk regions can be lightlyimplanted to form p− and n− regions (not illustrated).

FIG. 3 i: Gate electrodes 30 and 32 and spacers are formed, as known inthe art.

FIG. 3 j: Implantation is performed to create p+ and n+ doped regionsand P-N butted junction 36. Preferably, the implantation mask is locatedso that the butted junction 36 is located in the SOI region 22. Thebutted junction 36 can alternatively be located over the buried sidewallspacer 38 (and overlapping the epitaxy filled trench). However, it ismore difficult to design for this junction placement because errors inmask alignment could cause the butted junction to be located in the bulkregion, and this would cause circuit malfunction (due to contact betweenp+ doped region and substrate 20).

FIG. 3 k: The metal silicide layer 40 bridging the butted junction 36 isformed. The metal silicide may be any of cobalt, titanium, tungsten,nickel, platinum, or similar silicide. The silicide layer 40 provides anOhmic connection across the butted junction.

Of course, the doping polarity can be reversed from that shown in FIGS.1 and 2 a-2 c. FIG. 4, for example, shows an embodiment of the presentinvention having an N-type device in the SOI region 22 and a P-typedevice in the bulk region.

FIG. 5 shows an alternative embodiment of the present invention in whichthe p+ and n+ doped regions do not extend down to the level of theburied oxide layer 25. Isolation (e.g. isolation between p+ and p−regions) is provided because the p+ and n+ regions extend to a levelbelow the buried sidewall spacer 38.

It will be clear to one skilled in the art that the above embodiment maybe altered in many ways without departing from the scope of theinvention. Accordingly, the scope of the invention should be determinedby the following claims and their legal equivalents.

1. A semiconductor integrated circuit, comprising: a) asemiconductor-on-insulator (SOI) region with a buried dielectric layer;b) a bulk semiconductor region adjacent to the SOI region; c) a trenchfilled with epitaxial semiconductor material disposed between the SOIregion and bulk region wherein said epitaxial semiconductor material hasa crystal orientation corresponding to crystal orientation of said SOIregion adjacent said SOI region and a crystal orientation correspondingto said bulk semiconductor region adjacent said bulk semiconductorregion and includes a transition of crystal orientation at approximatelya center of said epitaxial semiconductor material if said crystalorientation of said SOI region and said crystal orientation of said bulksemiconductor region are different.
 2. The semiconductor integratedcircuit of claim 1 further comprising a buried sidewall spacer betweenthe SOI region and bulk region, and disposed under the trench filledwith epitaxial semiconductor material.
 3. The semiconductor integratedcircuit of claim 1 further comprising: a) a first type doping in thebulk region; b) a second type doping in the SOI region; c) a butted P-Njunction between the first-type doping and second type doping, whereinthe butted junction is disposed in the SOI region, or in the filledtrench.
 4. The semiconductor integrated circuit of claim 3 wherein thefirst type doping extends into the SOI region.
 5. The semiconductorintegrated circuit of claim 3 wherein the trench filled with epitaxialsemiconductor material has the first type doping.
 6. The semiconductorintegrated circuit of claim 3 further comprising a metal silicide layerdisposed on the butted P-N junction.
 7. The semiconductor integratedcircuit of claim 6 wherein the metal silicide layer is disposed on aportion of the bulk region having the first type doping and on a portionof the SOI region having the second type doping.
 8. The semiconductorintegrated circuit of claim 1 wherein the SOI region and bulk regionhave different crystal orientations.
 9. The semiconductor integratedcircuit of claim 8 wherein the SOI region and bulk region are made ofsilicon, and wherein the SOI region has a {110} crystal orientation, andthe bulk region has a {100} crystal orientation.
 10. A semiconductorintegrated circuit, comprising: a) a semiconductor-on-insulator (SOI)region with a buried dielectric layer; b) a bulk semiconductor regionadjacent to the SOI region; c) a P-N junction formed from a first typedoping in the bulk region and a second type doping in the SOI region; d)a metal silicide layer disposed on and electrically bridging the P-Njunction wherein epitaxial semiconductor material has a crystalorientation corresponding to crystal orientation of said SOI regionadjacent said SOI region and a crystal orientation corresponding to saidbulk semiconductor region adjacent said bulk semiconductor region andincludes a transition of crystal orientation at approximately a centerof said epitaxial semiconductor material if said crystal orientation ofsaid SOI region and said crystal orientation of said bulk semiconductorregion are different.
 11. The semiconductor integrated circuit of claim10 wherein the P-N junction is disposed in the SOI region.
 12. Thesemiconductor integrated circuit of claim 10 wherein the P-N junction isdisposed at the trench filled with epitaxial semiconductor material. 13.The semiconductor integrated circuit of claim 10 further comprising atrench filled with epitaxial semiconductor material disposed between theSOI region and bulk region.